发明名称 |
METHOD OF MANUFACTURING NONVOLATILE MEMORY DEVICE |
摘要 |
In a non-volatile memory device and method of manufacturing the same, a device isolation pattern and an active region extend in a first direction on a substrate. A first dielectric pattern is formed on the active region of the substrate. Conductive stack structures are arranged on the first dielectric pattern and a recess is formed between a pair of the adjacent conductive stack structures. A protection layer is formed on a sidewall of the stack structure to protect the sidewall of the stack structure from over-etching along the first direction. The protection layer includes an etch-proof layer having oxide and arranged on a sidewall of the floating gate electrode and a sidewall of the control gate line and a spacer layer covering the sidewall of the conductive stack structures.
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申请公布号 |
US2012064710(A1) |
申请公布日期 |
2012.03.15 |
申请号 |
US201113230228 |
申请日期 |
2011.09.12 |
申请人 |
SIM JAE-HWANG;KIM KEON-SOO;MIN KYUNG-HOON;SONG MIN-SUNG;JUNG YEON-WOOK;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SIM JAE-HWANG;KIM KEON-SOO;MIN KYUNG-HOON;SONG MIN-SUNG;JUNG YEON-WOOK |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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