发明名称 |
METHOD FOR MANUFACTURING A SUPER-JUNCTION TRENCH MOSFET WITH RESURF STEPPED OXIDES AND TRENCHED CONTACTS |
摘要 |
A method of manufacturing a super junction semiconductor device having resurf stepped oxide structure is disclosed by providing semiconductor silicon layer having trenches and mesas. A plurality of first doped column regions of a second conductivity type in parallel surrounded with second doped column regions of a first conductivity type adjacent to sidewalls of the trenches are formed by angle ion implantations into a plurality of mesas through opening regions in a block layer covering both the mesas and a termination area. |
申请公布号 |
US2012064684(A1) |
申请公布日期 |
2012.03.15 |
申请号 |
US201113299648 |
申请日期 |
2011.11.18 |
申请人 |
HSIEH FU-YUAN;FORCE MOS TECHNOLOGY CO. LTD. |
发明人 |
HSIEH FU-YUAN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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