发明名称 SUBSTRATE PROVIDED WITH PIEZOELECTRIC THIN FILM AND MANUFACTURING METHOD THEREOF
摘要 <P>PROBLEM TO BE SOLVED: To provide a substrate provided with a piezoelectric thin film capable of performing non-destructive characteristic evaluation of the piezoelectric thin film, and provide a manufacturing method of the substrate. <P>SOLUTION: In a substrate provided with a piezoelectric thin film, a lower electrode layer 6 is formed on a substrate 5, and a piezoelectric thin film 2 having a perovskite structure is formed on the lower electrode layer 6. A lower electrode exposure part 3 in which a portion of the lower electrode layer 6 is exposed from the piezoelectric thin film 2 is provided on the lower electrode layer 6 without removing the piezoelectric thin film 2 because the piezoelectric thin film 2 formed on the lower electrode layer 6 is formed on a area narrower than that of the lower electrode layer 6. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012054317(A) 申请公布日期 2012.03.15
申请号 JP20100194132 申请日期 2010.08.31
申请人 HITACHI CABLE LTD 发明人 WATANABE KAZUTOSHI;SHIBATA KENJI;SUENAGA KAZUFUMI;NOMOTO AKIRA;HORIKIRI FUMIMASA
分类号 H01L41/09;C23C14/08;H01L41/08;H01L41/18;H01L41/22;H01L41/29;H01L41/331;H01L41/39 主分类号 H01L41/09
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