发明名称 APPARATUS AND METHOD FOR PLASMA TREATMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide an apparatus and a method for plasma treatment capable of treating a whole desired region to be treated of a substrate in a short time on the occasion where high-temperature heat treatment is applied to the surface and the vicinity of the substrate in a very short time and uniformly, or on the occasion where low-temperature plasma treatment is applied to the substrate by spraying plasma caused by reactant gas, or the plasma and the reactant gas flow at a time, on the substrate. <P>SOLUTION: In a plasma torch unit T, a coil is made by connecting a plurality of conductor rods 3 disposed in quartz tubes 4, and the inner half cylindrical portions of the quartz tubes 4 are exposed in a space 7 in a tubular chamber. The quartz tubes 4 and the conductor rods 3 are cooled by water flowing in the conductor rods 3 and the quartz tubes 4. A thin film 16 on a substrate 2 is plasma treated by spraying plasma on the substrate 2 from a plasma jet 12. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012054129(A) 申请公布日期 2012.03.15
申请号 JP20100196388 申请日期 2010.09.02
申请人 PANASONIC CORP 发明人 OKUMURA TOMOHIRO;NAKAYAMA ICHIRO;KAWAURA HIROSHI;KOMOTO TETSUYA
分类号 H05H1/24;C23C16/453;H01L21/205;H05H1/30 主分类号 H05H1/24
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