发明名称 |
Reconfigurable Multi-level Sensing Scheme for Semiconductor Memories |
摘要 |
A method for sensing at least one parameter indicative of a logical state of a multi-level memory cell includes the steps of: measuring the parameter of the multi-level memory cell; comparing the measured parameter of the multi-level memory cell with a prescribed reference signal, the reference signal having a value which varies as a function of time; and storing a time value corresponding to a point in time at which the reference signal is substantially equal to the measured parameter of the multi-level memory cell, the stored time value being indicative of a sensed logical state of the multi-level memory cell.
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申请公布号 |
US2012063195(A1) |
申请公布日期 |
2012.03.15 |
申请号 |
US201113230442 |
申请日期 |
2011.09.12 |
申请人 |
LAM CHUNG H.;LEWIS SCOTT C.;LI JING;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LAM CHUNG H.;LEWIS SCOTT C.;LI JING |
分类号 |
G11C11/00;G11C7/06 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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