发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
In the device, first and second transistors have first and second gates and first and second source/drain regions, respectively. First and second contacts are electrically connected to the first and the second source/drain regions, respectively. A width of a first bottom surface if the first contacts in a gate width direction of the first-gate is wider than a width of the first bottom in a gate length direction of the first-gate. Widths of a second bottom surface of the second-contact are narrower than the longitudinal direction width of the first bottom. The high-concentration region is formed between the first source/drain regions and the first-contact. Extending widths of an outline of the high-concentration region extending from an outline of the first bottom in the longitudinal direction is larger than extending widths of an outline of the high-concentration region extending from an outline thereof in the short direction. |
申请公布号 |
US2012061766(A1) |
申请公布日期 |
2012.03.15 |
申请号 |
US201113053611 |
申请日期 |
2011.03.22 |
申请人 |
IZUMI TATSUO;SUGIMAE KIKUKO;KUTSUKAKE HIROYUKI;YONEHAMA KEISUKE;KABUSHIKI KAISHA TOSHIBA |
发明人 |
IZUMI TATSUO;SUGIMAE KIKUKO;KUTSUKAKE HIROYUKI;YONEHAMA KEISUKE |
分类号 |
H01L27/092;H01L21/336 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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