DFB LASER DIODE HAVING A LATERAL COUPLING FOR LARGE OUTPUT POWER

摘要

The invention relates to a DFB laser diode having a lateral coupling, which comprises at least one semi-conductor substrate (10), at least one active layer (40) that is arranged on the semiconductor substrate, at least one ridge (70) that is arranged above the active layer (40), at least one periodic surface structure (110) that is arranged next to the ridge (70) above the active layer (40) and at least one wave guide layer (30, 50) comprising a thickness≧1μm that is arranged below and/or above the active layer.