| 摘要 |
PURPOSE: A nitride semiconductor laser element and a manufacturing method thereof are provided to improve the lifetime property of a device by suppressing the deterioration of a resonator surface. CONSTITUTION: An n semiconductor layer(21), an active layer(22), and a p semiconductor layer(23) are formed on a substrate(10) as a nitride semiconductor layer(20). A ridge(24) is formed on the upper side of the nitride semiconductor. A waveguide domain(26) is provided under the ridge. The nitride semiconductor layer has resonator surfaces at the ends of the waveguide domain. The resonator surfaces are vertically formed on the upper side of the nitride semiconductor layer. An insulating layer(30) is formed from the side of the ridge through the upper side of the nitride semiconductor layer. The p electrode(41) is formed on the upper side of the ridge. The n electrode(60) is formed on the rear side of the substrate. A protective film(50) is formed on the side of the nitride semiconductor layer.
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