METHOD OF FORMING SEMICONDUCTOR DEVICE AND THE DEVICE FORMED BY THE METHOD

摘要

PURPOSE: A semiconductor device and a method for forming the same are provided to shorten metal-filling time of via hole by multiplying an electroplating speed. CONSTITUTION: A substrate(1) having an upper surface(1a) and a lower surface(1b) is provided. Via hole is formed on the substrate. A seed layer(9) is formed on the floor and side wall of the via hole and on the substrate. The seed layer which is located on the floor of via hole is exposed. An unseeded layer(11) which does not perform a seed role is formed on the sidewall of the via hole. A plating layer is grown up from the exposed seed layer through a plating process. Via filling via hole is formed.