| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent overetching in glass caused when a black defect in a chromium mask is corrected by a photomask defect correcting device using a charged particle beam. Ž<P>SOLUTION: An overetched portion 3 of glass is filled with a transparent film 6 by electron beam deposition using TEOS (tetraethoxy silane) or siloxane molecules as a material. The depth distribution in the overetched portion of the glass is obtained with an atomic force microscope, and the film thickness to fill the defect is controlled according to the distribution to flatten the surface of the filled transparent film. Otherwise, the transparent film is deposited to be higher than the normal glass surface, and the portion higher than the glass surface is scraped off by a mechanical process by an atomic force microscope with a fixed height so as to flatten the surface of the filled transparent film. Ž<P>COPYRIGHT: (C)2009,JPO&INPIT Ž</p> |
