SEMICONDUCTOR LIGHT EMITTING DIODE CHIP, LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PURPOSE: A semiconductor light emitting diode chip, a light emitting device, and a manufacturing method thereof are provided to increase substantial brightness to a desired direction by obtaining high reflective efficiency by combining a metal reflective layer and an optic sublayer. CONSTITUTION: A light emitting diode structure(40) is formed on a substrate(41). The light emitting diode structure comprises an n-type semiconductor layer(42), an active layer(45), and a p-type semiconductor layer(46). An n-side electrode(49a) is formed on the n-type semiconductor layer. A transparent electrode layer(47) and a p-side electrode(49b) are successively formed on the p-type semiconductor layer. A lamination element(BR) for rear side reflection includes an optic sublayer(53) and a metal reflective layer(55).