| 摘要 |
<p>1455170 Integrated circuits INTEL CORP 22 March 1974 [25 April 1973] 12901/74 Heading H1K An integrated bipolar memory cell comprises, in a common semiconductor body, first and second mutually isolated zones 41, 42 of the same conductivity type, the first zone 41 serving as a common collector region for first and second base-emitter cross-coupled flip-flop transistors 10, 11 and the second zone 42 serving as a common collector for third and fourth transistors 14, 15 having their bases connected to the bases of the second and first transistors 11, 10 respectively. The base regions of the third and fourth transistors 14, 15 have extensions 46, 71a which constitute resistors, preferably of the "pinched base" type having diffused regions 47, 48 of the opposite type thereover. Fig. 2 shows a 2 x 2 portion of a memory array in which all the flip-flop transistors of a first row are formed in zone 41, those of the next row being formed in a third isolated zone 43 spaced from zone 41 by zone 42 which contains the third and fourth transistors and the resistors of all the memory cells of both rows.</p> |
