发明名称 |
METHOD FOR FORMING GE-SB-TE FILM, AND STORAGE MEDIUM |
摘要 |
There is provided a method for forming a Ge—Sb—Te film having a composition of Ge2Sb2Te5 on a substrate by a CVD method using a gaseous Ge source material, a gaseous Sb source material and a gaseous Te source material. The method includes loading the substrate within a processing chamber (Process 1); performing a first stage film forming process on the substrate by supplying the gaseous Ge source material and the gaseous Sb source material (Process 2); and performing a second stage film forming process on a film obtained through the first stage film forming process by supplying the gaseous Sb source material and the gaseous Te source material (Process 3). The Ge—Sb—Te film is formed by the film obtained through Process 2 and by a film obtained through Process 3. |
申请公布号 |
KR20120024740(A) |
申请公布日期 |
2012.03.14 |
申请号 |
KR20117029475 |
申请日期 |
2010.06.02 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
KAWANO YUMIKO;ARIMA SUSUMU |
分类号 |
H01L21/365;C23C16/18;C23C16/30 |
主分类号 |
H01L21/365 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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