| 摘要 |
PURPOSE: A nonvolatile memory device for reducing current consumption is provided to reduce the current consumption by precharging a source voltage of a pump with a preset level. CONSTITUTION: A high voltage switching block(100) precharges a first source voltage and a second source voltage with a first level in response to a high voltage switching control signal and a reference source voltage. A power generating block generates high voltages with different levels by using the reference source voltage, the first source voltage, and the second source voltage. A first high voltage switching unit(120) precharges a first source voltage to have a first level. A second high voltage switching unit(140) precharges the second source voltage to have the first level.
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