发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME |
摘要 |
PURPOSE: A semiconductor device and a driving method thereof are provided to alleviate the concentration of an electric field by making the distance between an electric field control electrode and a semiconductor layer longer than the distance between a gate electrode and the semiconductor layer. CONSTITUTION: A source electrode(102a) and a drain electrode(102b) are formed on a substrate(100). A semiconductor layer(104) is formed between the source electrode and the drain electrode. A first insulation layer(106) is formed on the semiconductor layer. A gate electrode(108) is formed on the first insulation layer. A second insulation layer(110) is formed on the gate electrode. An electric field control electrode(112) is formed on the second insulation layer.
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申请公布号 |
KR20120024487(A) |
申请公布日期 |
2012.03.14 |
申请号 |
KR20110088456 |
申请日期 |
2011.09.01 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
WATANABE KAZUNORI;YANAGISAWA MAKOTO |
分类号 |
H01L29/786;G02F1/136;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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