发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME
摘要 PURPOSE: A semiconductor device and a driving method thereof are provided to alleviate the concentration of an electric field by making the distance between an electric field control electrode and a semiconductor layer longer than the distance between a gate electrode and the semiconductor layer. CONSTITUTION: A source electrode(102a) and a drain electrode(102b) are formed on a substrate(100). A semiconductor layer(104) is formed between the source electrode and the drain electrode. A first insulation layer(106) is formed on the semiconductor layer. A gate electrode(108) is formed on the first insulation layer. A second insulation layer(110) is formed on the gate electrode. An electric field control electrode(112) is formed on the second insulation layer.
申请公布号 KR20120024487(A) 申请公布日期 2012.03.14
申请号 KR20110088456 申请日期 2011.09.01
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 WATANABE KAZUNORI;YANAGISAWA MAKOTO
分类号 H01L29/786;G02F1/136;H01L21/336 主分类号 H01L29/786
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