<p>PURPOSE: A semiconductor device with a memory device is provided to supply a memory device having low power consumption by reducing the number of circuit devices and wirings per bit. CONSTITUTION: A control circuit unit(202) is formed by using thin film transistors. An insulating layer is formed to cover up a conductive layer. A material layer(408) of a memory device is formed by using the same material as the light emitting layer included in the light emitting device. An antenna(430) is connected to an electrode(419) electrically connected to the thin film transistor which is supplied to a memory device area(201). The antenna is thickly formed to lower resistance.</p>
