SEMICONDUCTOR COMPONENT COMPRISING AN INTEGRATED CAPACITOR STRUCTURE THAT HAS A PLURALITY OF METALLIZATION PLANES

摘要

A semiconductor component includes an insulating layer, which is configured on a semiconductor substrate and in which a capacitor structure is formed. Said capacitor structure comprises at least two parallel metallization planes, whereby at least one of said planes is configured in a lattice and inhomogeneous structure, which are electrically connected to the first metallization plane, extended at least partially into the cavities of the latticework metallization plane.