METHOD FOR MACHINING OF WAFER AND APPARATUS THEREOF

摘要

PURPOSE: A method for processing a wafer and an apparatus thereof are provided to prevent the yield strength of processed surface of the wafer from being decreased by using nitrogen or carbon dioxide gases. CONSTITUTION: A carrier element(120) flows while being fixed on a support stand(110). A holder(130) fixes a wafer(10). The holder is combined with an upper end of the carrier element and integrally flows with the carrier element. A processing unit(140) is fixed to the support stand. The processing unit processes the wafer by irradiating the surface of the wafer with a laser wave.