METHOD FOR MANUFACTURING BONDED WAFER

摘要

Disclosed is a method for manufacturing a bonded wafer, wherein substrate breakage due to a difference between thermal expansion coefficients is not generated and no untransferred portion of a semiconductor thin film to be transferred is generated. The method for manufacturing a bonded wafer (8) wherein a semiconductor thin film (4) is provided on the surface of a handle substrate (3) includes: a step of forming an ion-implanted layer (2) by implanting ions from the surface (5) of a semiconductor substrate (1); a step of performing surface activating treatment to the surface (5) of the semiconductor substrate (1) and/or the surface of the handle substrate (3); a step of bonding the surface (5) of the semiconductor substrate (1) and the surface of the handle substrate (3) at 50-350°C; a step of obtaining a bonded body (6) by performing heat treatment to the bonded substrates at a maximum temperature of 200-350°C; a step of disposing the bonded body (6) at a temperature higher than the bonding temperature by 30-100°C, making the interface of the ion-implanted layer (2) brittle by radiating visible light toward the ion-implanted layer (2) of the semiconductor substrate from the handle substrate side or the semiconductor substrate side of the bonded body (6), and transferring the semiconductor thin film (4).