| 摘要 |
1479113 Thyristors SIEMENS AG 30 July 1975 [13 Aug 1974] 31819/75 Heading H1K In a shorted-emitter thyristor, a surface of an emitter zone 5 is electrically connected to an emitter electrode 2, and an adjacent base zone 4 electrically connected to a central electrode (3), Fig. 1 (not shown), is connected to the emitter electrode 2 by cylindrical shortcircuiting regions 6 lying in the emitter zone, the diameter of the region 6 not exceeding 60 Á and the spacing between the centres of the adjacent regions being such that the ratio of the spacing to the diameter is at least 3. Preferably, the diameter is not less than the thickness of the emitter zone. The doping of the emitter zone and that of the short-circuiting regions may be effected by ion implantation followed by diffusion. The device described may be of silicon having an ntype emitter region 5. The short circuiting regions may be arranged in a circle concentric with the central electrode (3). |
