NONVOLATILE MEMORY DEVICE AND READ METHOD OF THE SAME

摘要

PURPOSE: A nonvolatile memory device and a reading method thereof are provided to prevent a source line bouncing phenomenon by not precharging a memory cell with unconfirmed data in a reading operation. CONSTITUTION: Bit lines of memory cells with data are precharged(S614). A first reading operation is executed by applying a first reference voltage to the memory cells to check data saved in the memory cells(S615). The read data is transmitted to a second node of a temporary latch(S616). Bit lines of the unconfirmed memory cells with the unconfirmed data are precharged. A second reading operation is executed by applying a second reference voltage to memory cells for confirming data saved in the unconfirmed memory cells.