| 摘要 |
Disclosed is a rotation/revolution type vapor phase growth apparatus capable of increasing the area of a semiconductor thin film that can be vapor-phase grown at a time, without upsizing a susceptor or the like. The vapor phase growth apparatus is a horizontal vapor phase growth apparatus having a rotation/revolution mechanism and includes a bearing member 13 provided in a circular opening formed on a disk-shaped susceptor 12, a soaking plate 14 mounted rotatably on the bearing member, an external gear member 15 mounted on the soaking plate, a ring-shaped fixed internal gear member 17 including an internal gear engaged with the external gear member, a heating unit 19 for heating a substrate 18 retained on the external gear member from a backside of the susceptor, and a flow channel 20 for guiding a raw material gas in a direction parallel to a surface of the substrate. An external diameter of the bearing member or a gear reference circle diameter of the external gear member is smaller than an external diameter of the substrate. |
