| 摘要 |
PURPOSE: A substrate processing apparatus using inductively coupled plasma and a superstructure opening/closing device thereof are provided to improve processing efficiency by the appropriate change of plasma generation condition in a chamber. CONSTITUTION: A chamber(10) has an opened top. A dielectric window(20) is formed on the opened part of the chamber. An antenna(30) generates inductively coupled plasma inside the chamber on the top of the dielectric window. The superstructure(50) is installed on the top of the chamber to be detachable from the top of the chamber. The superstructure supports the antenna. The antenna is supported by an antenna support rod supported on the superstructure. The superstructure is formed of a vertical beam assembled with the upper end of the chamber on both ends of the horizontal beam.
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