发明名称 |
Implanted well breakdown in high voltage devices |
摘要 |
An n-type isolation structure is disclosed which includes an n-type BISO layer in combination with a shallow n-well, in an IC. The n-type BISO layer is formed by implanting n-type dopants into a p-type IC substrate in addition to a conventional n-type buried layer (NBL), prior to growth of a p-type epitaxial layer. The n-type dopants in the BISO implanted layer diffuse upward from the p-type substrate to between one-third and two-thirds of the thickness of the p-type epitaxial layer. The shallow n-type well extends from a top surface of the p-type epitaxial layer to the n-type BISO layer, forming a continuous n-type isolation structure from the top surface of the p-type epitaxial layer to the p-type substrate. The width of the n-type BISO layer may be less than the thickness of the epitaxial layer, and may be used alone or with the NBL to isolate components in the IC. |
申请公布号 |
US8134212(B2) |
申请公布日期 |
2012.03.13 |
申请号 |
US20090538594 |
申请日期 |
2009.08.10 |
申请人 |
HAO PINGHAI;SRIDHAR SEETHARAMAN;TODD JAMES ROBERT;TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HAO PINGHAI;SRIDHAR SEETHARAMAN;TODD JAMES ROBERT |
分类号 |
H01L29/76;H01L21/331;H01L21/76;H01L29/00;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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