发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE: A semiconductor integrated circuit device with a power mesh structure is provided to secure data retention time by blocking the inflow of a noise in a memory cell block. CONSTITUTION: A cell block includes a plurality of cell mats including a plurality of bit lines and word lines. A cell plate electrode(150) is arranged on the upper side of the cell block. A plate power mesh line(160) is electrically connected to the cell plate electrode. The plate power mesh line includes a first plate power mesh line(160a) and a second plate power mesh line(160b). The first plate power mesh line is extended in parallel to the word line. The second plate power mesh line is extended in parallel to the bit line. The first plate power mesh line includes a cutting unit.
申请公布号 KR20120023375(A) 申请公布日期 2012.03.13
申请号 KR20100086398 申请日期 2010.09.03
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, MYOUNG JIN;KYUNG, KI MYUNG
分类号 G11C5/14;G11C7/12;G11C8/08 主分类号 G11C5/14
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