发明名称 Method and apparatus of an inspection system using an electron beam
摘要 Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer. The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.
申请公布号 US8134125(B2) 申请公布日期 2012.03.13
申请号 US20080211343 申请日期 2008.09.16
申请人 IWABUCHI YUKO;TODOKORO HIDEO;MORI HIROYOSHI;SATO MITSUGU;USAMI YASUTSUGU;ICHIHASHI MIKIO;FUKUHARA SATORU;SHINADA HIROYUKI;KANEKO YUTAKA;SUGIYAMA KATSUYA;TAKAFUJI ATSUKO;TOYAMA HIROSHI;HITACHI, LTD. 发明人 IWABUCHI YUKO;TODOKORO HIDEO;MORI HIROYOSHI;SATO MITSUGU;USAMI YASUTSUGU;ICHIHASHI MIKIO;FUKUHARA SATORU;SHINADA HIROYUKI;KANEKO YUTAKA;SUGIYAMA KATSUYA;TAKAFUJI ATSUKO;TOYAMA HIROSHI
分类号 G01Q30/02;H01J37/28;G01N23/00;G01N23/20;G01N23/225;G21K1/08;G21K7/00;H01J37/22;H01J37/244;H01J37/256;H01L21/66 主分类号 G01Q30/02
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