发明名称 Non-volatile semiconductor memory compressing data to improve performance
摘要 A non-volatile semiconductor memory is disclosed comprising a plurality of paired pages, wherein each pair comprises a first page and a second page. A write command is received from a host comprising write data and a write address. The write address is mapped to a physical address of a selected one of the paired memory pages. The write data is compressed to generate compressed data, and when the compressed data fits in one of the pages of the selected pair, the compressed data is stored in the first page and in the second page of the selected pair in an S-mode.
申请公布号 US8135903(B1) 申请公布日期 2012.03.13
申请号 US20090610129 申请日期 2009.10.30
申请人 KAN ALAN CHINGTAO;WESTERN DIGITAL TECHNOLOGIES, INC. 发明人 KAN ALAN CHINGTAO
分类号 G06F12/00 主分类号 G06F12/00
代理机构 代理人
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