| 摘要 |
A nonvolatile semiconductor memory includes active regions . . . AAj−1, AAj, AAj−1, . . . formed in a semiconductor substrate; a plurality of word lines WL0, WL1, . . . in the row direction; memory cell transistors, each including a floating gate provided on the semiconductor substrate via a tunneling insulating film, an inter-gate insulating film disposed on the floating gate, and a control gate disposed on the inter-gate insulating film, disposed on intersections of word lines and active regions; select gate lines SGD in the row direction; bit line contacts CB disposed on the active regions; and a plurality of bit lines in the column direction and connected to the active regions via the bit line contacts; and the bit line contacts are formed by forming an electrode material for the bit line contacts in lines in the row direction and cutting the electrode material for each of the bit lines to avoid contact-failure of bit line contacts CB. |
