发明名称 |
LED and fabrication method thereof |
摘要 |
A light emitting diode is provided. The diode includes: a substrate; a first nitride gallium layer disposed above the substrate; a first electrode provided at one portion of and above the first nitride gallium layer; an active layer provided above the first nitride gallium layer, for emitting light; a second nitride gallium layer provided above the active layer; and transparent electrodes spaced apart from one another above the second nitride gallium layer. |
申请公布号 |
US8134172(B2) |
申请公布日期 |
2012.03.13 |
申请号 |
US20060565832 |
申请日期 |
2006.07.17 |
申请人 |
KIM SANG KEE;LEE SONG JAE;JUNG HEA JUNG;LG INNOTEK CO., LTD. |
发明人 |
KIM SANG KEE;LEE SONG JAE;JUNG HEA JUNG |
分类号 |
H01L33/00;H01L33/38;H01L33/42 |
主分类号 |
H01L33/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|