发明名称 LED and fabrication method thereof
摘要 A light emitting diode is provided. The diode includes: a substrate; a first nitride gallium layer disposed above the substrate; a first electrode provided at one portion of and above the first nitride gallium layer; an active layer provided above the first nitride gallium layer, for emitting light; a second nitride gallium layer provided above the active layer; and transparent electrodes spaced apart from one another above the second nitride gallium layer.
申请公布号 US8134172(B2) 申请公布日期 2012.03.13
申请号 US20060565832 申请日期 2006.07.17
申请人 KIM SANG KEE;LEE SONG JAE;JUNG HEA JUNG;LG INNOTEK CO., LTD. 发明人 KIM SANG KEE;LEE SONG JAE;JUNG HEA JUNG
分类号 H01L33/00;H01L33/38;H01L33/42 主分类号 H01L33/00
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