发明名称 |
Semiconductor device and method for manufacturing the same |
摘要 |
A silicon film is crystallized in a predetermined direction by selectively adding a metal element having a catalytic action for crystallizing an amorphous silicon and annealing. In manufacturing TFT using the crystallized silicon film, TFT provided such that the crystallization direction is roughly parallel to a current-flow between a source and a drain, and TFT provided such that the crystallization direction is roughly vertical to a current-flow between a source and a drain are manufactured. Therefore, TFT capable of conducting a high speed operation and TFT having a low leak current are formed on the same substrate.
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申请公布号 |
US8133770(B2) |
申请公布日期 |
2012.03.13 |
申请号 |
US201113010087 |
申请日期 |
2011.01.20 |
申请人 |
TAKEMURA YASUHIKO;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
TAKEMURA YASUHIKO |
分类号 |
G02F1/136;H01L21/84;G02F1/1368;H01L21/20;H01L21/265;H01L21/336;H01L21/77;H01L27/12;H01L29/04;H01L29/78;H01L29/786 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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