| 摘要 |
<p>PURPOSE:To improve the yield of fabricating a semiconductor device at its dicing process by chemically etching in advance along the scribe surface of a semiconductor wafer to thereby form a recess groove therealong and forming mechanically a polishing groove therealong. CONSTITUTION:A resist mask is formed on a semiconductor wafer, and the wafer is etched with a mixture solution of fluoric acid and nitric acid to thereby form lattice recess grooves on the scribe surface thereof. The interval and width of the grooves are selected according to the size of the semiconductor divece. After the recess grooves are diced by a dicing saw to approx. half the thickness of the wafer in depth, the wafer is urged from the opposite side of the grooves to thereby separate it into pieces. When an adhesive tape is labeled on one surface of the wafer at this time and the wafer is then urged on a rubber plate, the array of the wafer can be retained as it is. According to this method, it can eliminate cracks, defects at the edges of the wafer due to the friction among the pieces of the wafer.</p> |
