发明名称 |
Memory cells, memory cell constructions, and memory cell programming methods |
摘要 |
Some embodiments include memory cells including a memory component having a first conductive material, a second conductive material, and an oxide material between the first conductive material and the second conductive material. A resistance of the memory component is configurable via a current conducted from the first conductive material through the oxide material to the second conductive material. Other embodiments include a diode including metal and a dielectric material and a memory component connected in series with the diode. The memory component includes a magnetoresistive material and has a resistance that is changeable via a current conducted through the diode and the magnetoresistive material. |
申请公布号 |
US8134194(B2) |
申请公布日期 |
2012.03.13 |
申请号 |
US20080125756 |
申请日期 |
2008.05.22 |
申请人 |
MOULI CHANDRA;MICRON TECHNOLOGY, INC. |
发明人 |
MOULI CHANDRA |
分类号 |
H01L27/108;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
H01L27/108 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|