发明名称 |
Method of manufacturing porous insulating film, method of manufacturing semiconductor device, and semiconductor device |
摘要 |
A method includes forming an insulating film over a substrate by introducing a cyclic siloxane compound having a cyclic siloxane as a skeleton and having at least one volatile hydrocarbon group bonded to a side chain, and a silicon-containing compound into a plasma, and converting the insulating film to a porous insulating film by adding energy to the insulating film. The silicon-containing compound is decomposed using less energy as compared with the skeleton of the cyclic siloxane compound, the volatile hydrocarbon group, and the bond between the cyclic siloxane compound and the volatile hydrocarbon group. |
申请公布号 |
US8133821(B2) |
申请公布日期 |
2012.03.13 |
申请号 |
US20090620913 |
申请日期 |
2009.11.18 |
申请人 |
ITO FUMINORI;HAYASHI YOSHIHIRO;RENESAS ELECTRONICS CORPORATION |
发明人 |
ITO FUMINORI;HAYASHI YOSHIHIRO |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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