| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to improve the uniformity of a bit line by controlling the bit line width and controlling the thickness of a spacer formed in the side of a contact pattern. CONSTITUTION: An inter-layer insulating film including a contact hole is formed on a semiconductor substrate. The contact hole is in filled with a conductive material to form a contact pattern(120). A space layer having a first thickness surrounds the side of the contact pattern. A bit line crossing one side of the contact pattern in the spacer layer is formed. A capping insulating film(160) is formed in the exposed side of the bit line. An air gap, having a first distance, is arranged between the contact pattern and the bit line.
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