THREE DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: A three-dimensional semiconductor apparatus and a manufacturing method thereof are provided to localize a region for charge storage, thereby solving a technical problem due to a charge spreading phenomenon. CONSTITUTION: A charge storage layer(CL) covers an opening part and an undercut region(107). The charge storage layer comprises vertical parts(VTP), horizontal parts(HRP), and connection parts(CNP). The space between the horizontal parts is filled with a tunnel insulating layer(TIL). The tunnel insulating layer includes extension parts arranges between the horizontal parts of the charge storage layer. A gap is formed between the horizontal parts.