发明名称 |
SEMICONDUCTOR COMPOUND STRUCTURE AND METHOD OF MANUFACTURING THE SAME USING GRAPHENE OR CARBON NANOTUBES, AND SECICONDUCTOR DEVICE INCLUDING THE SEMICONDUCTOR COMPOUND |
摘要 |
PURPOSE: A semiconductor compound structure which uses a carbon nano tube or graphene, a manufacturing method thereof, and a semiconductor device including the same are provided to additionally arrange a resistive layer on a lower electrode, thereby preventing a flow of an excessive current to a light emitting layer from the lower electrode. CONSTITUTION: An amorphous substrate(110) is prepared. A buffer layer(120) is arranged on the substrate. The buffer layer comprises carbon elements which have hexagonal crystalline structures. A semiconductor compound layer(130) is arranged on the buffer layer. The semiconductor compound layer comprises III-V group compound semiconductor materials. |
申请公布号 |
KR20120023433(A) |
申请公布日期 |
2012.03.13 |
申请号 |
KR20100086586 |
申请日期 |
2010.09.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, JUN HEE;KIM, UN JEONG;LEE, SANG JIN |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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