发明名称 SEMICONDUCTOR COMPOUND STRUCTURE AND METHOD OF MANUFACTURING THE SAME USING GRAPHENE OR CARBON NANOTUBES, AND SECICONDUCTOR DEVICE INCLUDING THE SEMICONDUCTOR COMPOUND
摘要 PURPOSE: A semiconductor compound structure which uses a carbon nano tube or graphene, a manufacturing method thereof, and a semiconductor device including the same are provided to additionally arrange a resistive layer on a lower electrode, thereby preventing a flow of an excessive current to a light emitting layer from the lower electrode. CONSTITUTION: An amorphous substrate(110) is prepared. A buffer layer(120) is arranged on the substrate. The buffer layer comprises carbon elements which have hexagonal crystalline structures. A semiconductor compound layer(130) is arranged on the buffer layer. The semiconductor compound layer comprises III-V group compound semiconductor materials.
申请公布号 KR20120023433(A) 申请公布日期 2012.03.13
申请号 KR20100086586 申请日期 2010.09.03
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, JUN HEE;KIM, UN JEONG;LEE, SANG JIN
分类号 H01L21/20 主分类号 H01L21/20
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