发明名称 Microstructure and method of manufacturing the same
摘要 A microstructure that comprises an insulating base material having through micropores filled with metal at a high filling ratio and that can be used as an anisotropically conductive member is provided. The microstructure comprises an insulating base material having through micropores with a pore size of from 10 to 500 nm at a density of from 1×106 to 1×1010 pores/mm2, a metal being filled into the through micropores at a filling ratio of at least 80%.
申请公布号 US8133578(B2) 申请公布日期 2012.03.13
申请号 US20080344032 申请日期 2008.12.24
申请人 HATANAKA YUSUKE;FUJIFILM CORPORATION 发明人 HATANAKA YUSUKE
分类号 B32B3/26;B05D5/12 主分类号 B32B3/26
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