| 摘要 |
A semiconductor device comprises an internal voltage generator circuit which includes a first transistor having a first and a second main electrode and a control electrode, a control circuit controlling a voltage between the second main electrode and the control electrode of the first transistor such that a voltage at the first main electrode of the first transistor remains at a predetermined voltage, and a second transistor having a first and a second main electrode and a control electrode. A voltage between the second main electrode and the control electrode of the first transistor is applied between the second main electrode and the control electrode of the second transistor. |
