发明名称 |
Semiconductor device that degrades leak current of a transistor |
摘要 |
A semiconductor device, has a main transistor that is a first-conductivity-type MOS transistor and has the drain connected to a first potential; a first switch circuit that is connected between the source of said main transistor and a second potential; a dummy transistor that is a first-conductivity-type MOS transistor whose source serves also as the source of said main transistor; and a second switch circuit that is connected between the drain of said dummy transistor and said first potential or said second potential. |
申请公布号 |
US8134404(B2) |
申请公布日期 |
2012.03.13 |
申请号 |
US20100692387 |
申请日期 |
2010.01.22 |
申请人 |
ASHIDA MITSUYUKI;HAMADA MOTOTSUGU;KABUSHIKI KAISHA TOSHIBA |
发明人 |
ASHIDA MITSUYUKI;HAMADA MOTOTSUGU |
分类号 |
H03K3/01 |
主分类号 |
H03K3/01 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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