发明名称 Semiconductor device that degrades leak current of a transistor
摘要 A semiconductor device, has a main transistor that is a first-conductivity-type MOS transistor and has the drain connected to a first potential; a first switch circuit that is connected between the source of said main transistor and a second potential; a dummy transistor that is a first-conductivity-type MOS transistor whose source serves also as the source of said main transistor; and a second switch circuit that is connected between the drain of said dummy transistor and said first potential or said second potential.
申请公布号 US8134404(B2) 申请公布日期 2012.03.13
申请号 US20100692387 申请日期 2010.01.22
申请人 ASHIDA MITSUYUKI;HAMADA MOTOTSUGU;KABUSHIKI KAISHA TOSHIBA 发明人 ASHIDA MITSUYUKI;HAMADA MOTOTSUGU
分类号 H03K3/01 主分类号 H03K3/01
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