| 摘要 |
PURPOSE: A semiconductor device is provided to use a semiconductor material capable of significantly reducing an off-current of a transistor, thereby maintaining information without supplying a power source. CONSTITUTION: A memory cell(190) comprises a first transistor(160), a second transistor(162), and a capacitive device(164). The first transistor is formed in order to have a conductive type different from the second transistor. The number of bit lines(BL_1-BL_n) and word lines(WL_1-WL_m+1) which are perpendicular to the bit lines is m+1. A first word line is electrically connected to a gate electrode of the second transistor. A first wiring and a drain electrode of the first transistor are electrically connected. A second wiring and a source electrode of the first transistor are electrically connected.
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