Epitaxially coated silicon wafer with 110 orientation and method for producing it

摘要

An epitaxially coated silicon wafer comprises a plane surface misoriented relative to a {110} crystal plane, wherein the <110> direction of the single silicon crystal is tilted away by the angle &thetas; from the normal to the wafer surface and the projection of the tilted <110> direction forms an angle &phgr; with the direction <−110> in the wafer, and &thetas; is given by 0≦̸&thetas;≦̸3° and 45°≦̸&phgr;≦̸90°, as well as for all symmetrically equivalent directions.