发明名称 MEMORY ELEMENT AND MEMORY DEVICE
摘要 <p>PURPOSE: A memory device and a memory apparatus using the same are provided to secure enough thermal stability which is information retention capability, thereby arranging the memory device with superior property balance. CONSTITUTION: A magnetic pinned layer(15) is arranged on an underlying layer(14). An intermediate layer(16) is arranged on the magnetic pinned layer. A memory layer(17) is arranged on the intermediate layer. The memory layer is maintained by a magnetization state of a magnetic material. A cap layer(18) is arranged on the memory layer.</p>
申请公布号 KR20120023560(A) 申请公布日期 2012.03.13
申请号 KR20110084330 申请日期 2011.08.24
申请人 SONY CORPORATION 发明人 BESSHO KAZUHIRO;HOSOMI MASANORI;OHMORI HIROYUKI;HIGO YUTAKA;YAMANE KAZUTAKA;UCHIDA HIROYUKI
分类号 H01L27/115;H01L21/8247;H01L43/00 主分类号 H01L27/115
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