发明名称 |
MEMORY ELEMENT AND MEMORY DEVICE |
摘要 |
<p>PURPOSE: A memory device and a memory apparatus using the same are provided to secure enough thermal stability which is information retention capability, thereby arranging the memory device with superior property balance. CONSTITUTION: A magnetic pinned layer(15) is arranged on an underlying layer(14). An intermediate layer(16) is arranged on the magnetic pinned layer. A memory layer(17) is arranged on the intermediate layer. The memory layer is maintained by a magnetization state of a magnetic material. A cap layer(18) is arranged on the memory layer.</p> |
申请公布号 |
KR20120023560(A) |
申请公布日期 |
2012.03.13 |
申请号 |
KR20110084330 |
申请日期 |
2011.08.24 |
申请人 |
SONY CORPORATION |
发明人 |
BESSHO KAZUHIRO;HOSOMI MASANORI;OHMORI HIROYUKI;HIGO YUTAKA;YAMANE KAZUTAKA;UCHIDA HIROYUKI |
分类号 |
H01L27/115;H01L21/8247;H01L43/00 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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