发明名称 |
SILICON CARBIDE SUBSTRATE PRODUCTION METHOD AND SILICON CARBIDE SUBSTRATE |
摘要 |
<p>A method for manufacturing a silicon carbide substrate (1) includes the steps of: preparing a plurality of SiC substrates (20) each made of single-crystal silicon carbide; forming a base layer (10) made of silicon carbide and holding the plurality of SiC substrates (20), which are arranged side by side when viewed in a planar view; and forming a filling portion (60) filling a gap between the plurality of SiC substrates (20).</p> |
申请公布号 |
KR20120023817(A) |
申请公布日期 |
2012.03.13 |
申请号 |
KR20117030499 |
申请日期 |
2010.09.27 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
HARADA SHIN;SASAKI MAKOTO;NISHIGUCHI TARO;TAMASO HIDETO;NAMIKAWA YASUO |
分类号 |
H01L21/20;H01L21/336;H01L29/78 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|