| 摘要 |
PURPOSE: A solid-state imaging device is provided to reduce power consumption by enlarging a dynamic range and having a high speed shutter and a low driving voltage. CONSTITUTION: A first semiconductor layer(5a) is composed of a first semiconductor region(2), a second semiconductor region(3), and a third semiconductor region(4). A second semiconductor layer(5b) is composed of a conductor electrode formed by interposing an insulating layer at the outer circumference of the second semiconductor region. A third semiconductor layer(5c) is composed of a fourth semiconductor region formed at the outer circumference of the second semiconductor region. A fourth semiconductor layer(5d) is composed of a fifth semiconductor region contacted with the second semiconductor region. A photo diode accumulates a signal charge generated within a pixel(1a).
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