| 摘要 |
PURPOSE: A method for forming a semiconductor device is provided to easily form a minute pattern of the semiconductor device by forming a mask pattern near a spacer pattern. CONSTITUTION: An etched layer(102) is formed on a semiconductor substrate. A space pattern(104) is formed on a cell region of the semiconductor substrate. A plurality of partition patterns are formed on the semiconductor substrate. A spacer insulating film is formed on a plurality of partition patterns. The spacer insulating film is etched back. A mask pattern is connected to the spacer pattern near a boundary between the cell region and a peripheral circuit region.
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