发明名称 DEPOSITION APPARATUS FOR SUBSTRATE
摘要 PURPOSE: A substrate depositing apparatus is provided to improve the reliability of a deposition process by including an ion generator which plasmarizes reactive gas in a gas spray unit. CONSTITUTION: A gas spray unit sprays deposition gas to a substrate. An ion generator(130) sprays the plasmarized reactive gas through the gas spray unit after the reactive gas of the sprayed deposition gas is plasmarized. The gas spray unit includes a unit body and a spray buffer unit. Both sides of the unit body facing the substrate is horizontal to the incline of the substrate in a device housing(110). A spray buffer unit is formed on both sidewalls of the unit body and sprays the deposition gas to the substrate.
申请公布号 KR20120022152(A) 申请公布日期 2012.03.12
申请号 KR20100085364 申请日期 2010.09.01
申请人 K.C.TECH CO., LTD. 发明人 SHIN, IN CHUL
分类号 H01L21/205 主分类号 H01L21/205
代理机构 代理人
主权项
地址