PLASMA ETCHING METHOD AND APPARATUS THEREOF

摘要

PURPOSE: A plasma etching method and a plasma etching apparatus are provided to maintain electron density of plasma by maintaining a second high frequency power for preset time even though an etching process is stopped. CONSTITUTION: A first electrode(112) is provided to a chamber. A second electrode is formed in the chamber and faces the first electrode. A high frequency supply unit applies a first high frequency power with a first frequency to the first electrode. A DC supply unit(126) applies DC power to the second electrode to input the electron of the plasma to the first electrode. A control unit(128) pulse-modulates the first high frequency power by controlling the on and off of the first high frequency power. The control unit controls the DC power of the second supply unit by synchronizing with the on and off of the first high frequency power.