发明名称 SEMICONDUCTOR SUBSTRATE, ELECTRONIC DEVICE, SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD
摘要 <p>There is provided a semiconductor wafer including a base wafer that has an impurity region in which an impurity atom has been introduced into silicon, a plurality of seed bodies provided in contact with the impurity region, and a plurality of compound semiconductors each provided in contact with the corresponding seed bodies and lattice-matched or pseudo-lattice-matched to the corresponding seed bodies. The semiconductor wafer can further include an inhibitor provided on the base wafer and in which a plurality of apertures exposing at least a part of the impurity region are provided.</p>
申请公布号 KR20120022872(A) 申请公布日期 2012.03.12
申请号 KR20117026299 申请日期 2010.05.19
申请人 SUMITOMO CHEMICAL CO., LTD. 发明人 YAMANAKA SADANORI;HATA MASAHIKO;FUKUHARA NOBORU
分类号 H01L21/20;H01L27/06 主分类号 H01L21/20
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