发明名称 |
SEMICONDUCTOR SUBSTRATE, ELECTRONIC DEVICE, SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD |
摘要 |
<p>There is provided a semiconductor wafer including a base wafer that has an impurity region in which an impurity atom has been introduced into silicon, a plurality of seed bodies provided in contact with the impurity region, and a plurality of compound semiconductors each provided in contact with the corresponding seed bodies and lattice-matched or pseudo-lattice-matched to the corresponding seed bodies. The semiconductor wafer can further include an inhibitor provided on the base wafer and in which a plurality of apertures exposing at least a part of the impurity region are provided.</p> |
申请公布号 |
KR20120022872(A) |
申请公布日期 |
2012.03.12 |
申请号 |
KR20117026299 |
申请日期 |
2010.05.19 |
申请人 |
SUMITOMO CHEMICAL CO., LTD. |
发明人 |
YAMANAKA SADANORI;HATA MASAHIKO;FUKUHARA NOBORU |
分类号 |
H01L21/20;H01L27/06 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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