METHOD FOR MANUFACTURING MOS TRANSISTOR

摘要

PURPOSE: A method for manufacturing a MOS(Metal Oxide Semiconductor) transistor is provided to minimize gate line resistance by recessing a first work function metal layer to be below a top surface of a mold oxide layer. CONSTITUTION: Provided is a substrate(10) having a first active region(14) and a second active region(16). A dummy gate stack is formed on the first active region and the second active region. A spacer(30) is formed on a sidewall of the dummy gate stack. A source/drain region(34) is formed in the first active region. A mold dielectric film(40) is formed on the source/drain region.