SEMICONDUCTOR DEVICE

摘要

PURPOSE: A semiconductor device is provided to suppress light degradation by reducing an amount of light absorbed into an oxide semiconductor by increasing reflectivity of light in a wavelength range which is absorbed by the oxide semiconductor. CONSTITUTION: A gate electrode(401) is formed on a substrate(400). A source electrode is formed on the gate electrode. The source electrode is comprised of a gate insulating layer(402), an oxide semiconductor layer(409), a first conductive layer(406a), and a second conductive layer(405a). A drain electrode is formed on the source electrode. The drain electrode is comprised of the first conductive layer(406b) and the second conductive layer(405b).